| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 197 0 |
 SM ISO690:2012SENOKOSOV, Edward, CHUKITA, V., KHAMIDULLIN, Rustam, CHEBAN, V., ODIN, Ivan, CHUKICHEV, Mikhail. Position sensitivity characteristics of n-CdSe epitaxial layers grown on mica crystals in a quasi-closed system. In: Inorganic Materials, 2016, nr. 8(52), pp. 762-764. ISSN 0020-1685. DOI: https://doi.org/10.1134/S002016851608015X |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Inorganic Materials |
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| Numărul 8(52) / 2016 / ISSN 0020-1685 /ISSNe 1608-3172 | ||||||
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| DOI:https://doi.org/10.1134/S002016851608015X | ||||||
| Pag. 762-764 | ||||||
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| Rezumat | ||||||
Photosensitive epitaxial n-CdSe layers with high structural perfection have been grown on mica (muscovite) crystals in a quasi-closed system. We have studied polar diagrams of sensitivity for the epitaxial n-CdSe layers on mica as four-contact position-sensitive semiconductor photodetectors. Position sensitivity characteristics of the epitaxial n-CdSe layers on mica have been determined. |
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| Cuvinte-cheie cadmium selenide, epitaxial layers, photodetectors, polar diagrams, position sensitivity |
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