Ternary semiconductor compounds of AIBIIICVI 2 type with different structural, electrical and optical properties have been extensively studied because of their potential application in a variety of electro-optical devices. Cu(In,Zn)Se2 (CIZS) is one of the most promising materials for commercial photovoltaic applications. This is due to the high absorption coefficient of approximately 105 cm-1 in a wide spectral region and a band gap that is in principle adjustable between 1.05 eV for CuInSe2 and 2.60 eV for ZnSe. This suggests that they can be used in thin film solar cells as absorber as well a wide-gap window layer. The Cu/(In+Zn) ratio of the CIZS layers is the crucial parameter for the physical properties of the semiconductor material as well for the solar cell applications. In the present work influence of temperature on the forward and reverse of current-voltage (I-V) characteristics of the ZnO/CdS/CuIn0.94Zn0.06Se2 thin films heterojunctions is investigated. The CIZS films were prepared by two-step selenization of Cu-In-ZnSe layers under N2 flow with solid Se source close to samples. Such technology is especially suited for developments of industrial processing of large area CIZS films suitable for solar cells. Cu-In-ZnSe layers were deposited onto Mo-coated soda lime glass substrates by thermal evaporation or rf-sputtering. The thin films microstructure consisted of densely packed grains with dimensions of 1 - 2 μm and crystallite growth direction perpendicular to substrate plane. The films were polycrystalline and their phase composition and structural characteristics were determined by Cu/In/ZnSe ratio in the starting layers. The as-prepared films show p-type electrical conductivity, which is confirmed by the thermoelectric probe measurement. All the obtained films had thicknesses of 1.5 – 1.9 mm. The films showed absorption coefficients > 1·105 cm–1 above the fundamental absorption edge with an optical band gap in the range of 1.20 - 1.25 eV, indicating that these films adequate to be used as absorber material in thin film solar cells. A buffer layers CdS were deposited onto the CIZS films in the chemical bath. The films ZnO were deposited onto CdS by thermal evaporation. The films ZnO and CdS were polycrystalline, had thicknesses of 0.35 μm and 0.05 μm respectively and revealed n-type of conductivity. The initial site of forward current (I-V) characteristics of the investigated structures is described by equation I = Is [exp(eU/nkT)-1]. The diode quality factor n = 5 at T = 300K and n = 19 at T = 80K, and a saturation current in dark Is = 4.9·10-5 A at T = 300K and Is = 3.7·10-5 A at T = 80K In a range of forward bias 0.3 - 1.0 V and reverse bias 0.1 - 1.0 V the current (I) and voltage (U) of the investigated structures are related by equation I ~ Um. For forward bias m = 1.2 – 3.9 and for reverse bias m = 1.2 – 2.4. The received results give the basis to assume diffusion-recombination mechanism of passage of a current in the investigated structures. The rectification factor K of the investigated structures, certain as at a bias voltage U = 0.5 V made the ratio of a forward current to the reverse current K = 9 at T = 300K and K = 3 at T = 80K. Illumination of structures by a white light with density of radiation ~ 50 mW/cm2 causes generation of a photovoltaic, which positive sign from the CIZS film and will be agreement with a direction of diode rectification. The open-circuit voltage makes Uoc ~ 180 mV, and a short-circuit current Isc ~ 6 mA/cm2 at T = 300K.