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SM ISO690:2012 MORARI, Vadim, POSTOLACHE, Vitalie, MIHAI, G., RUSU, Emil, MONAICO, Eduard, URSACHI, Veaceslav, NIELSCH, Kornelius, TIGINYANU, Ion. Electrical and photoelectrical properties of zn1−xMgxO Thin Films Obtained by Spin Coating and Aerosol Deposition Method. In: IFMBE Proceedings: . 4th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 4, 18-21 septembrie 2019, Chişinău. Switzerland: Springer Nature Switzerland AG, 2020, Ediția 4, Vol.77, pp. 105-109. ISBN 978-303031865-9. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-31866-6_23 |
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IFMBE Proceedings Ediția 4, Vol.77, 2020 |
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Conferința "Conference on Nanotechnologies and Biomedical Engineering" 4, Chişinău, Moldova, 18-21 septembrie 2019 | |||||||
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DOI:https://doi.org/10.1007/978-3-030-31866-6_23 | |||||||
CZU: 538.9+621.315.592 | |||||||
Pag. 105-109 | |||||||
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Zn1−xMgxO thin films were prepared by aerosol deposition and spin-coating method, using zinc acetate and magnesium acetate as precursors. The obtained films were investigated by scanning electron microscopy (SEM), electrical and photoelectrical characterization. SEM and energy dispersive x-ray (EDX) analysis has shown that the produced thin films are homogeneous in morphology and composition. The relaxation of photoconductivity under UV illumination was investigated in vacuum as a function of temperature. It was found that the thin films produced by spin-coating exhibit much higher photosensitivity and long duration relaxation of photoconductivity, in contrast to the films obtained by aerosol deposition. The investigation of photosensitivity in a wider spectral range demonstrated that the films are also sensitive to the visible and infrared irradiation. |
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Cuvinte-cheie I-V characterization, SEM, Semiconductors, UV radiation, ZnMgO |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Morari, V.A.</dc:creator> <dc:creator>Postolache, V.</dc:creator> <dc:creator>Mihai, G.</dc:creator> <dc:creator>Rusu, E.V.</dc:creator> <dc:creator>Monaico, E.V.</dc:creator> <dc:creator>Ursachi, V.V.</dc:creator> <dc:creator>Nielsch, K.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:date>2020</dc:date> <dc:description xml:lang='en'><p>Zn<sub>1−x</sub>Mg<sub>x</sub>O thin films were prepared by aerosol deposition and spin-coating method, using zinc acetate and magnesium acetate as precursors. The obtained films were investigated by scanning electron microscopy (SEM), electrical and photoelectrical characterization. SEM and energy dispersive x-ray (EDX) analysis has shown that the produced thin films are homogeneous in morphology and composition. The relaxation of photoconductivity under UV illumination was investigated in vacuum as a function of temperature. It was found that the thin films produced by spin-coating exhibit much higher photosensitivity and long duration relaxation of photoconductivity, in contrast to the films obtained by aerosol deposition. The investigation of photosensitivity in a wider spectral range demonstrated that the films are also sensitive to the visible and infrared irradiation.</p></dc:description> <dc:source>IFMBE Proceedings (Ediția 4, Vol.77) 105-109</dc:source> <dc:subject>I-V characterization</dc:subject> <dc:subject>SEM</dc:subject> <dc:subject>Semiconductors</dc:subject> <dc:subject>UV radiation</dc:subject> <dc:subject>ZnMgO</dc:subject> <dc:title>Electrical and photoelectrical properties of zn1−xMgxO Thin Films Obtained by Spin Coating and Aerosol Deposition Method</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>