Birefringence of SnSe single crystals in excitonic and electronic transitions region
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ZALAMAI, Victor, TIRON, Andrew, RUSU, Emil, SYRBU, Nicolae. Birefringence of SnSe single crystals in excitonic and electronic transitions region. In: Materials Research Express, 2019, nr. 6(12), p. 0. ISSN -. DOI: https://doi.org/10.1088/2053-1591/ab5f8a
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Materials Research Express
Numărul 6(12) / 2019 / ISSN - /ISSNe 2053-1591

Birefringence of SnSe single crystals in excitonic and electronic transitions region

DOI:https://doi.org/10.1088/2053-1591/ab5f8a

Pag. 0-0

Zalamai Victor1, Tiron Andrew1, Rusu Emil2, Syrbu Nicolae1
 
1 Technical University of Moldova,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu"
 
 
Disponibil în IBN: 6 aprilie 2020


Rezumat

Absorption spectra in temperature range 300-10 K were studied. The minimal band gap A 1 (1.091 eV at 300 K) is formed by direct allowed in E||c polarization and forbidden in E||a polarizations transitions. The next interval B 1 (1.316 eV) is formed by direct transitions allowed in E||a polarization and forbidden in E||c polarization. Angular dependences of the electron transitions in the band gap minimum were investigated. Spectral dependences of refractive index ( n ) were calculated from wavelength modulation transmission ( ΔT/Δλ ) and reflection ( ΔR/Δλ ) spectra in the region of direct electron transitions. The absorption edge shifts to higher energies with temperature decreasing, and temperature coefficient of edge absorption shift (β) is 3.4 10-3 eV K-1 

Cuvinte-cheie
birefiringence, layered semiconductor, optical contants, optical spectroscopy, tin selenide