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SM ISO690:2012
Afisarea articolelor 1-4(4) pentru cuvîntul-cheie "Electron traps"
Deep level transient spectroscopy characterization of porous GaP layers
Călin Mircea
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of the International Semiconductor Conference
Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.
Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-137
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Photocurrent relaxation in pure and Pr-doped a-As2S3 films
Iovu Mihail1, Vasiliev Ion1, Colomeico Eduard1, Emelianova Evguenia2, Arkhipov Vladimir3, Adriaenssens Guy J.2
Journal of Physics Condensed Matter
Nr. / 2004 / ISSN 0953-8984 /ISSNe 1361-648X
Disponibil online 4 March, 2024. Descarcări-0. Vizualizări-150
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Formation of a double electric layer at the ZnmIn2Sm+3 (m = 1,2,3) - H2O(S2-/S22-) interface
Ţiuleanu Ion, Simaşchevici Alexei, Sprincean Ala
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of the International Semiconductor Conference
Vol. 2. 2001. New Jersey. .
Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-140
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Mecanisms of photoconductivity decay in bulk and porous InP
Călin Mircea
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of the International Semiconductor Conference
Vol. 2. 2001. New Jersey. .
Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-143
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