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 SM ISO690:2012DOROGAN, Valerian, IVASHCHENCO, Anatolii, SNIGUR, Anatolii, SHCHUROVA, Olga, VIERU, Tatiana. Study on the manufacture technology of GaP-SnO2 structures for ultraviolet radiation sensors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 469-472. DOI: https://doi.org/10.1109/SMICND.1995.495062 |
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| Proceedings of the International Semiconductor Conference 1995 | ||||||
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Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1995.495062 | ||||||
| Pag. 469-472 | ||||||
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The manufacture technology of GaP-SnO2 structures for UV-radiation sensors producing is described in this article. The used technological methods are: liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolyze for SnO2 deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers. |
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| Cuvinte-cheie Carrier concentration, charge carriers, Epitaxial growth, Optical sensors, pyrolysis, Semiconducting gallium compounds, Semiconductor device manufacture, Ultraviolet radiation |
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