Study on the manufacture technology of GaP-SnO2 structures for ultraviolet radiation sensors

Dorogan Valerian; Ivashchenco Anatolii; Snigur Anatolii; Shchurova Olga; Vieru Tatiana

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105

SM ISO690:2012

DOROGAN, Valerian, IVASHCHENCO, Anatolii, SNIGUR, Anatolii, SHCHUROVA, Olga, VIERU, Tatiana. Study on the manufacture technology of GaP-SnO2 structures for ultraviolet radiation sensors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 469-472. DOI: https://doi.org/10.1109/SMICND.1995.495062

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Proceedings of the International Semiconductor Conference 1995

Conferința "International Semiconductor Conference"
18, Sinaia, Romania, 11-14 octombrie 1995

Study on the manufacture technology of GaP-SnO₂ structures for ultraviolet radiation sensors

DOI:https://doi.org/10.1109/SMICND.1995.495062

Pag. 469-472

Dorogan Valerian, Ivashchenco Anatolii, Snigur Anatolii, Shchurova Olga, Vieru Tatiana

Technical University of Moldova

Disponibil în IBN: 7 decembrie 2023

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Rezumat

The manufacture technology of GaP-SnO₂ structures for UV-radiation sensors producing is described in this article. The used technological methods are: liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolyze for SnO₂ deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers.

Cuvinte-cheie
Carrier concentration, charge carriers, Epitaxial growth, Optical sensors, pyrolysis, Semiconducting gallium compounds, Semiconductor device manufacture, Ultraviolet radiation

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