| Articolul precedent |
| Articolul urmator |
 |
 110 0 |
 SM ISO690:2012DOROGAN, Valerian, IVASHCHENCO, Anatolii, SNIGUR, Anatolii, SHCHUROVA, Olga, VIERU, Tatiana. Study on the manufacture technology of GaP-SnO2 structures for ultraviolet radiation sensors. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 469-472. DOI: https://doi.org/10.1109/SMICND.1995.495062 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Proceedings of the International Semiconductor Conference 1995 | ||||||
|
Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.1995.495062 | ||||||
| Pag. 469-472 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The manufacture technology of GaP-SnO2 structures for UV-radiation sensors producing is described in this article. The used technological methods are: liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolyze for SnO2 deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers. |
||||||
| Cuvinte-cheie Carrier concentration, charge carriers, Epitaxial growth, Optical sensors, pyrolysis, Semiconducting gallium compounds, Semiconductor device manufacture, Ultraviolet radiation |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1109/SMICND.1995</identifier> <creators> <creator> <creatorName>Dorogan, V.V.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Ivashchenco, A.I.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Snigur, A.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Shchurova, O.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Vieru, T.S.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Study on the manufacture technology of GaP-SnO2 structures for ultraviolet radiation sensors</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>1995</publicationYear> <relatedIdentifier relatedIdentifierType='ISBN' relationType='IsPartOf'></relatedIdentifier> <subjects> <subject>Carrier concentration</subject> <subject>charge carriers</subject> <subject>Epitaxial growth</subject> <subject>Optical sensors</subject> <subject>pyrolysis</subject> <subject>Semiconducting gallium compounds</subject> <subject>Semiconductor device manufacture</subject> <subject>Ultraviolet radiation</subject> </subjects> <dates> <date dateType='Issued'>1995</date> </dates> <resourceType resourceTypeGeneral='Text'>Conference Paper</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>The manufacture technology of GaP-SnO<sub>2</sub> structures for UV-radiation sensors producing is described in this article. The used technological methods are: liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolyze for SnO<sub>2</sub> deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers.</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>
|
|
|
