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<creators>
<creator>
<creatorName>Guc, M.S.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Variable range-hopping conductivity in Cu2ZnSiSe4</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2013</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2013-09-03</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.</description>
</descriptions>
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<format>application/pdf</format>
</formats>
</resource>