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<cfResPublDate>2013-09-03</cfResPublDate>
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<cfTitle cfLangCode='EN' cfTrans='o'>Variable range-hopping conductivity in Cu2ZnSiSe4</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.</cfAbstr>
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