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77 0 |
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539.2 (226) |
Proprietăţile şi structura sistemelor moleculare (224) |
SM ISO690:2012 LAIHO, Reino, LISUNOV, Konstantin, STAMOV, Vladimir, ZAHVALINSKII, Vasilii. Magnetoresistance of (Zn1-xMnx)3As2 in region of hopping conductivity. In: Journal of Magnetism and Magnetic Materials, 1995, vol. 140-144, pp. 2021-2022. ISSN 0304-8853. DOI: https://doi.org/10.1016/0304-8853(94)00711-X |
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<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1016/0304-8853(94)00711-X</identifier> <creators> <creator> <creatorName>Laiho, R.</creatorName> <affiliation>Universitatea din or. Turku, Laboratorul Fizic Internaţional Wihuri, Finlanda</affiliation> </creator> <creator> <creatorName>Lisunov, C.G.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Stamov, V.N.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Zahvalinskii, V.S.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Magnetoresistance of (Zn1-xMnx)3As2 in region of hopping conductivity</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>1995</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0304-8853</relatedIdentifier> <subjects> <subject>Engineering controlled terms Activation energy</subject> <subject>charge carriers</subject> <subject>composition</subject> <subject>Magnetic field effects</subject> <subject>Magnetic semiconductors</subject> <subject>Magnetic variables measurement</subject> <subject>Magnetoresistance</subject> <subject>single crystals</subject> <subject>Thermal effects</subject> <subject>X ray diffraction analysis Engineering uncontrolled terms Homogeneity</subject> <subject>Hopping conductivity</subject> <subject>Magnetoresistance measurement</subject> <subject>Mobility threshold</subject> <subject>Underbarrier spin flip scattering Engineering main heading Zinc alloys</subject> <subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>539.2</subject> </subjects> <dates> <date dateType='Issued'>1995-02-01</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>Magnetoresistance (MR) of (Zn<sub>1-x</sub>Mn<sub>x</sub>)<sub>3</sub>As<sub>2</sub> (0 ≤ x ≤ 0.13) is measured at 4 < T < 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field</p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>