Magnetoresistance of (Zn1-xMnx)3As2 in region of hopping conductivity

Laiho Reino; Lisunov Konstantin; Stamov Vladimir; Zahvalinskii Vasilii

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539.2 (226)

Proprietăţile şi structura sistemelor moleculare (224)

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LAIHO, Reino, LISUNOV, Konstantin, STAMOV, Vladimir, ZAHVALINSKII, Vasilii. Magnetoresistance of (Zn1-xMnx)3As2 in region of hopping conductivity. In: Journal of Magnetism and Magnetic Materials, 1995, vol. 140-144, pp. 2021-2022. ISSN 0304-8853. DOI: https://doi.org/10.1016/0304-8853(94)00711-X

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Journal of Magnetism and Magnetic Materials

Volumul 140-144 / 1995 / ISSN 0304-8853

Magnetoresistance of (Zn1-xMnx)3As2 in region of hopping conductivity

DOI:https://doi.org/10.1016/0304-8853(94)00711-X

CZU: 539.2

Pag. 2021-2022

Laiho Reino¹, Lisunov Konstantin², Stamov Vladimir², Zahvalinskii Vasilii²

¹ Wihuri Physical Laboratory, University of Turku,
² Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 20 februarie 2024

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Magnetoresistance (MR) of (Zn_1-xMn_x)₃As₂ (0 ≤ x ≤ 0.13) is measured at 4 < T < 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field

Cuvinte-cheie
Engineering controlled terms Activation energy, charge carriers, composition, Magnetic field effects, Magnetic semiconductors, Magnetic variables measurement, Magnetoresistance, single crystals, Thermal effects, X ray diffraction analysis Engineering uncontrolled terms Homogeneity, Hopping conductivity, Magnetoresistance measurement, Mobility threshold, Underbarrier spin flip scattering Engineering main heading Zinc alloys

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