Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane

Ghimpu Lidia; Cojocaru Victor; Soroceanu Marius; Sacarescu Liviu; Katashev Alexei; Harabagiu Valeria; Tiginyanu Ion

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SM ISO690:2012

GHIMPU, Lidia, COJOCARU, Victor, SOROCEANU, Marius, SACARESCU, Liviu, KATASHEV, Alexei, HARABAGIU, Valeria, TIGINYANU, Ion. Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 35, 15-17 octombrie 2012, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2012, Vol. 2, pp. 295-298. ISBN 978-146730736-9. DOI: https://doi.org/10.1109/SMICND.2012.6400780

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Proceedings of the International Semiconductor Conference
Vol. 2, 2012

Conferința " International Semiconductor Conference"
35, Sinaia, Romania, 15-17 octombrie 2012

Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane

DOI:https://doi.org/10.1109/SMICND.2012.6400780

Pag. 295-298

Ghimpu Lidia¹, Cojocaru Victor¹, Soroceanu Marius², Sacarescu Liviu², Katashev Alexei³, Harabagiu Valeria², Tiginyanu Ion¹⁴

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² “Petru Poni” Institute of Macromolecular Chemistry,
³ Biomedical Engineering and Nanotechnologies Institute, Riga Technical University,
⁴ Technical University of Moldova

Proiecte:

Menționat în lucrare: 266515 Preparation for Moldova's integration into the European Research Area and into the Community R&D Framework Programs on the basis of scientific excellence

Disponibil în IBN: 13 decembrie 2023

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Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor /poly[methyl(H)silane] and the applied electric field has proved that thea given structures are piezoelectric materials useful for fabrication of optoelectronic devices.

Cuvinte-cheie
Atomic force microscope (AFM), Deposition Parameters, High quality, Nano-fibrous, Nano-structured layer, rf-Magnetron sputtering, Silicon substrates, ZnO, ZnO layers

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