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 SM ISO690:2012TODOSICIUC, Alexandr, NIKORICH, Andrey V., KONDRYA, Elena, WARCHULSKA, Jolanta K.. Electrical properties of lead telluride single crystals doped with Gd. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 35, 15-17 octombrie 2012, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2012, Vol. 2, pp. 269-272. ISBN 978-146730736-9. DOI: https://doi.org/10.1109/SMICND.2012.6400788 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2012 |
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Conferința " International Semiconductor Conference" 35, Sinaia, Romania, 15-17 octombrie 2012 | |
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| DOI:https://doi.org/10.1109/SMICND.2012.6400788 | |
| Pag. 269-272 | |
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Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states. |
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| Cuvinte-cheie Charge state, electron transport, Free carrier concentration, Impurity content, Lead telluride, low temperatures, Narrow-gap semiconductors, PbTe, Seebeck coefficient measurement, Single-crystalline, Temperature dependence, Thermoelectric power factors |
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