Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions
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POTLOG, Tamara. Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 35, 15-17 octombrie 2012, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2012, Vol. 2, pp. 261-264. ISBN 978-146730736-9. DOI: https://doi.org/10.1109/SMICND.2012.6400790
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Proceedings of the International Semiconductor Conference
Vol. 2, 2012
Conferința " International Semiconductor Conference"
35, Sinaia, Romania, 15-17 octombrie 2012

Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions

DOI:https://doi.org/10.1109/SMICND.2012.6400790

Pag. 261-264

Potlog Tamara
 
Moldova State University
 
 
Disponibil în IBN: 13 decembrie 2023


Rezumat

The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation. 

Cuvinte-cheie
alternating current, Cole-Cole plots, Complex impedance, Dielectrical relaxation mechanisms, Higher frequencies, Imaginary parts, Impedance spectroscopy, Lower frequencies, Temperature dependent