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 SM ISO690:2012IVASHCHENKO, Anatolii, KERNER, Iacov. Analytical test of the film/substrate boundary perfection in SnO 2 thin films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 27, 4-6 octombrie 2004, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2004, Vol. 2, Ediția 27, pp. 433-436. |
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 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 27, 2004 |
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Conferința "27th International Semiconductor Conference" 27, Sinaia, Romania, 4-6 octombrie 2004 | ||||||
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It was elaborated the analytical method giving an opportunity to estimate the perfection of film/substrate boundary quality in SnO 2; thin films. The method is based on theoretical study of the relation between activation energy of film conductivity and film thickness. |
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| Cuvinte-cheie activation energy, boundary conditions, Electric conductivity, Substrates, Thickness control, thin films |
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