Analytical test of the film/substrate boundary perfection in SnO 2 thin films

Ivashchenko Anatolii; Kerner Iacov

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IVASHCHENKO, Anatolii, KERNER, Iacov. Analytical test of the film/substrate boundary perfection in SnO 2 thin films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 27, 4-6 octombrie 2004, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2004, Vol. 2, Ediția 27, pp. 433-436.

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Proceedings of the International Semiconductor Conference
Vol. 2, Ediția 27, 2004

Conferința "27th International Semiconductor Conference"
27, Sinaia, Romania, 4-6 octombrie 2004

Analytical test of the film/substrate boundary perfection in SnO ₂ thin films

Pag. 433-436

Ivashchenko Anatolii, Kerner Iacov

Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 27 noiembrie 2023

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Rezumat

It was elaborated the analytical method giving an opportunity to estimate the perfection of film/substrate boundary quality in SnO ₂; thin films. The method is based on theoretical study of the relation between activation energy of film conductivity and film thickness.

Cuvinte-cheie
activation energy, boundary conditions, Electric conductivity, Substrates, Thickness control, thin films

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