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 SM ISO690:2012БАХАДИРХАНОВ, М., ИБРАГИМОВ, Ш., КАМОЛОВ, И.. Влияние химической обработки на поверхностные состояния и электрофизические характеристики Au-n-InP структур. In: Электронная обработка материалов, 2004, nr. 2(40), pp. 92-95. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 2(40) / 2004 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 92-95 | ||||||
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The paper reports the results of investigations of chemical processing influence on parameters of Schottky barriers M-InP. The influence was estimated according to CVD and VFD of contacts Аu-n-InP (100) (S = 4,10 - 2 cm2) formed by the method thermal deposition of Au on substrates n-InP (N = 1018 сm3), 403 - 423 K. It is shown, that chemical processing is the important factor of control of the superficial properties of InP which effect practically on all parameters of contacts Au-n-InP. At variation of a kind of chemical processing the factor of non-ideality of CVD, эф б Ф and the voltage of breakdown can change within the limits of 1,06 - 1,8, 0,35 - 0,68 eV and 3 -10 V, respectively. At the analysis of electric characteristics of contacts Au-n-InP it is seen that Schottky barriers received on a surface that was processed in alkaline medium (рН > 7) possess weaker temperature dependence Is . This fact testifies about decreased Фб Т of such contacts. |
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