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 SM ISO690:2012CĂLIN, Mircea. Deep level transient spectroscopy characterization of porous GaP layers. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 23, 10-14 octombrie 2000, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2000, Vol. 1, pp. 135-138. DOI: https://doi.org/10.1109/SMICND.2000.890204 |
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 Proceedings of the International Semiconductor Conference Vol. 1, 2000 |
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Conferința "International Semiconductor Conference" 23, Sinaia, Romania, 10-14 octombrie 2000 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2000.890204 | ||||||
| Pag. 135-138 | ||||||
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Deep Level Transient Spectroscopy (DLTS) spectra of Schottky diodes on both (100) and (111) GaP substrates were measured. The parameters of one hole and three electron traps were determined. The set of the charge carrier traps was found to depend upon the orientation of the substrate. These traps are suggested to be formed during the high-energy ion implantation and electrochemical processing. |
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| Cuvinte-cheie charge carriers, deep level transient spectroscopy, Electron traps, Hole traps, ion implantation, multilayers, porous materials, Schottky barrier diodes, Substrates |
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