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SM ISO690:2012 KHOLOMINA, T.. The charge relaxation in semiconductors and elements of microelectronics. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 179-181. ISBN 978-9975-45-377-6. |
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Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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Pag. 179-181 | ||||||
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The analysis of existing theoretical models for the description of relaxation processes in semiconductors and semiconductor barrier structures has been carried out. The criteria allowing the use of transport models of nonequilibrium charge carriers in a relaxation or recombination semiconductors have been formulated. It is shown that a space charge region (SCR) of semiconductor barrier structure under reverse bias can be considered as a relaxation semiconductor in which the relaxation time of charge carriers is determined by the span time while the base maintains the properties of a recombination semiconductor where the electric field is absent. |
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Cuvinte-cheie electrical conductivity, recombination, relaxation time, Maxwell relaxation, screening length, drift length, ballisticity length |
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