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 SM ISO690:2012GUK, Maxim. Variable range-hopping conductivity in Cu2ZnSiSe4. In: Moldavian Journal of the Physical Sciences, 2013, nr. 1-2(12), pp. 18-25. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 1-2(12) / 2013 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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| Pag. 18-25 | ||||||
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Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states. |
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<meta name="citation_title" content="Variable range-hopping conductivity in Cu2ZnSiSe4"> <meta name="citation_author" content="Guk Maxim"> <meta name="citation_publication_date" content="2013/09/03"> <meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences"> <meta name="citation_volume" content="12"> <meta name="citation_issue" content="1-2"> <meta name="citation_firstpage" content="18"> <meta name="citation_lastpage" content="25"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Variable%20range_hopping%20conductivity%20in%20Cu2ZnSiSe4.pdf">
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