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 SM ISO690:2012ANDRIESH, Andrei, VERLAN, Victor, MALAHOV, Ludmila. Deposition of heterostructures based on CIGSE and CdS by electron-beam ablation. In: Journal of Optoelectronics and Advanced Materials, 2003, vol. 5, pp. 817-821. ISSN 1454-4164. |
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  Journal of Optoelectronics and Advanced Materials |
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| Volumul 5 / 2003 / ISSN 1454-4164 | ||||||
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| Pag. 817-821 | ||||||
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A two step deposition technology of CuIn1-xGaxSe 2 (CIGSE) polycrystalline films was developed: deposition with the help of a "e-beam ablation" process at 250°C followed by selenization at 500°C. The X-ray diffraction analysis of films reveals the chalcopyrite phase with orientation preferential 〈112〉. Thin films have optical absorption coefficients in the 104 cm-1 range and the band gaps are 1.0, 1.4 and 1.65 eV for x = 0, 0.25, 1.0. The obtained heterostructures CdS/CuIn1-xGaxSe2 display good photovoltaic properties. The method of admittance spectroscopy for determination of density of deep states (N(E)) was applied for optimization of the deposition process and photovoltaic properties. The continuous distribution of electronic states and new type of metastable centers have been found. |
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| Cuvinte-cheie CdS, Cu-In-Ga-Se films, Electron-beam ablation, Solar cells |
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