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 SM ISO690:2012BOTNARYUK, V., GORCEAC, Leonid, PLESCA, Valentin, RUD, V., RUD, Yu.. Photosensitivity of InP/CdS heterostructures in linearly polarized light. In: Semiconductors, 1997, vol. 31, pp. 194-196. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187106 |
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  Semiconductors |
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| Volumul 31 / 1997 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187106 | ||||||
| Pag. 194-196 | ||||||
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Measurements have been made of the photosensitivity of (p+ -p-)-InP/n+-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p+ -InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity Si ≃0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ≃75-80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors. |
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| Cuvinte-cheie photosensitivity, Polarized Radiation, photodetectors |
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