Numerical estimation of the radiation hardness of bipolar integrated circuits in various irradiation conditions of space environment
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BAKERENKOV, A., PERSHENKOV, Vyacheslav, RODIN, A., FELITSYN, V., MIROSHNICHENKO, A.. Numerical estimation of the radiation hardness of bipolar integrated circuits in various irradiation conditions of space environment. In: Nanotechnologies and Biomedical Engineering, Ed. 3, 23-26 septembrie 2015, Chișinău. Springer, 2015, Editia 3, p. 125.
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Nanotechnologies and Biomedical Engineering
Editia 3, 2015
Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
3, Chișinău, Moldova, 23-26 septembrie 2015

Numerical estimation of the radiation hardness of bipolar integrated circuits in various irradiation conditions of space environment


Pag. 125-125

Bakerenkov A., Pershenkov Vyacheslav, Rodin A., Felitsyn V., Miroshnichenko A.
 
National Research Nuclear University MEPhI, Moscow
 
 
Disponibil în IBN: 17 aprilie 2019


Rezumat

The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was performed for cyclic temperature irradiation, which is typical for space applications, and for solar flare impact.