Room-temperature negative differential resistance in Znse-based terahertz quantum cascade structures (invited paper)
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538.958 (16)
Fizica materiei condensate. Fizica solidului (349)
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SIRKELI, Vadim, YILMAZOGLU, Oktay, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Room-temperature negative differential resistance in Znse-based terahertz quantum cascade structures (invited paper). In: Ştiinţă, educaţie, cultură, 10 februarie 2017, Comrat. Comrat: Universitatea de Stat din Comrat, 2017, Vol.2, pp. 328-330. ISBN 978-9975-83-040-9.
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Ştiinţă, educaţie, cultură
Vol.2, 2017
Conferința "Ştiinţă, educaţie, cultură"
Comrat, Moldova, 10 februarie 2017

Room-temperature negative differential resistance in Znse-based terahertz quantum cascade structures (invited paper)

CZU: 538.958

Pag. 328-330

Sirkeli Vadim1, Yilmazoglu Oktay2, Kuppers Franko2, Hartnagel Hans Ludwig2
 
1 State University „Dimitrie Cantemir”,
2 Technical University Darmstadt
 
 
Disponibil în IBN: 4 martie 2019


Rezumat

We identified conditions for room-temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/ZnMgSe material systems. The THz QCL devices are based on three-level two-well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the negative differential resistance with peak-tovalley ratio of current density of 1.33 at room-temperature (300 K).

Cuvinte-cheie
negative differential resistance, terahertz emission, quantum cascade laser, ZnSe, ZnMgSe alloy