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539.23:544.6.016 (1) |
Proprietăţile şi structura sistemelor moleculare (224) |
Electrochimie (115) |
SM ISO690:2012 BOROICA, Lucica, SAVA, Bogdan Alexandru, ELIŞA, Mihail, OANE, M., ŞIKIMAKA, Olga, POPA (BIVOL), Mihaela. Thin films obtained by pulse laser deposition and magnetron sputtering from glass and glass ceramic materials. In: Materials Science and Condensed Matter Physics, Ed. 9, 25-28 septembrie 2018, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2018, Ediția 9, p. 111. |
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Materials Science and Condensed Matter Physics Ediția 9, 2018 |
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Conferința "International Conference on Materials Science and Condensed Matter Physics" 9, Chișinău, Moldova, 25-28 septembrie 2018 | ||||||
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CZU: 539.23:544.6.016 | ||||||
Pag. 111-111 | ||||||
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The boron oxide, B2O3 is very useful in glass preparation as glass network former. The presence of TiO2 above 10 mol % may lead it to act as a network former [1, 2]. By melting and rapid quenching a transparent and homogenous boro-titanate glass was obtained, with the following composition: BaO-40mol%, B2O3-25mol% and TiO2-35 mol%. The melting temperature was 1200 OC for 1 hour. From the obtained glass block a target for Pulsed Laser Deposition (PLD) with D=2 cm and a target for Magnetron Sputtering (MS) with diameter of 5-6 cm were made [2-6]. The thin films were deposited on silica glass and Si substrates using PLD and MS methods. Several experiments were carried out in order to obtain high quality films from glass and glass ceramic materials. The above glass was thermally treated at 600 0C to obtain glass ceramic. Some of the glass properties are presented in the table below. Thin films were obtained by MS deposition, using a Varian equipment. The working pressure was 3x10-5 Torr in argon - Ar atmosphere and the evaporation rate 0.3-0.4 Å/s. The distance between the target and the substrate was 10 cm + 0.2 cm. The used substrates were electronic p type silicon and quartz (silicon dioxide) glass polished to laser quality. For PLD deposits, the evaporation rate was 0.7-1.1 Å / s and pulsed energy was 300 mJ /ns. The obtained films were characterized by AFM. One of these films was used in a complex film deposition for an experimental CIGS solar cell as follows: Mo ≈ 0.8 μm (800 nm); CIGS ≈ 1.8 μm (1800 nm), B4 ≈ 50nm; i-ZnO optimum ≈ 70 nm for which an efficiency of more than 16% was obtained, as seen in next Figure. |
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