| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
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 950 10 |
| Ultima descărcare din IBN: 2023-02-28 03:08 |
| Căutarea după subiecte similare conform CZU |
| 62-982+621.38 (1) |
| Inginerie. Tehnică în general (3053) |
| Electrotehnică (1161) |
 SM ISO690:2012BĂJENESCU, Titu-Marius. Deep ultraviolet light emitting diodes (Duv Leds). In: Journal of Engineering Sciences, 2018, vol. 25, nr. 2, pp. 6-17. ISSN 2587-3474. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Journal of Engineering Sciences | ||||||
| Volumul 25, Numărul 2 / 2018 / ISSN 2587-3474 /ISSNe 2587-3482 | ||||||
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| CZU: 62-982+621.38 | ||||||
| Pag. 6-17 | ||||||
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| Rezumat | ||||||
There are a variety of applications for devices that extend into the deep-UV, including biological agent detection and optical storage. The nitride material system is a set of semiconducting compounds that have wavelengths that span a broad range, from yellow to deepUV. AlGaN has a direct bandgap that extends into the deep-UV range; the device-quality material, is deposited epitaxially using metalorganic chemical vapor deposition on sapphire substrates. |
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| Cuvinte-cheie Duv Leds, deep-UV, ultraviolet leds, AlGaN/AlGaN Duv Leds |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Băjenescu, T.I.</dc:creator> <dc:date>2018-11-01</dc:date> <dc:description xml:lang='en'><p>There are a variety of applications for devices that extend into the deep-UV, including biological agent detection and optical storage. The nitride material system is a set of semiconducting compounds that have wavelengths that span a broad range, from yellow to deepUV. AlGaN has a direct bandgap that extends into the deep-UV range; the device-quality material, is deposited epitaxially using metalorganic chemical vapor deposition on sapphire substrates.</p></dc:description> <dc:source>Journal of Engineering Sciences (2) 6-17</dc:source> <dc:subject>Duv Leds</dc:subject> <dc:subject>deep-UV</dc:subject> <dc:subject>ultraviolet leds</dc:subject> <dc:subject>AlGaN/AlGaN Duv Leds</dc:subject> <dc:title>Deep ultraviolet light emitting diodes (Duv Leds)</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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