<?xml version='1.0' encoding='utf-8'?>
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<creators>
<creator>
<creatorName>Nazarov, M.V.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>High efficient light emitting devices with additiona scattering layer and reflecting medium for white lig generation</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2008</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2008-02-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Multiexcitation of phosphors, additional scattering layer around the chip and special re-

flecting medium were proposed to improve the  luminous efficiency and color properties of 
LED devices. LED devices with an n-UV Ga(In)N chip as well as blue GaN chip and multiexcited phosphors were developed and created. These LEDs for white light generation show 
better quantum yield of green and red phosphors, higher total brightness, and improved color 
rendering index. 
 </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>