Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr
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2020-10-15 14:22
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SKIPETROV, E., PLASTUN, A., KOVALEV, B., SKIPETROVA, L., TOPCHEVSKAYA, T., SLINIKO, V.. Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr. In: Moldavian Journal of the Physical Sciences, 2007, nr. 1(6), pp. 62-66. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 1(6) / 2007 / ISSN 1810-648X /ISSNe 2537-6365

Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr

Pag. 62-66

Skipetrov E.1, Plastun A.1, Kovalev B.1, Skipetrova L.1, Topchevskaya T.1, Sliniko V.2
 
1 Lomonosov Moscow State University,
2 Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
 
 
Disponibil în IBN: 26 noiembrie 2013


Rezumat

The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built.