Optical light modulation in planar As2Se3Sn x waveguides
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POPESCU, Aurelian, ALBU, Alexandru, TSARANU, A.. Optical light modulation in planar As2Se3Sn x waveguides. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 5, 9-12 septembrie 1997, Bucharest. Bellingham, Washington: SPIE, 1998, Ediția 5, Vol.3405, pp. 902-905. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.312685
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Proceedings of SPIE - The International Society for Optical Engineering
Ediția 5, Vol.3405, 1998
Conferința "Fifth Conference on Optics"
5, Bucharest, Romania, 9-12 septembrie 1997

Optical light modulation in planar As2Se3Sn x waveguides

DOI:https://doi.org/10.1117/12.312685

Pag. 902-905

Popescu Aurelian, Albu Alexandru, Tsaranu A.
 
Center of Optoelectronics
 
 
Disponibil în IBN: 7 februarie 2024


Rezumat

The modulation of infrared radiation (λ = 1150 nm) in waveguides of glassy semiconductors As2Se3 and As2Se 3Sn0.175 has for the first time been investigated experimentally. The measurement of frequency-response characteristic shows that there are two relaxation constans-fast and slow. The rise time of optical modulator with arsenic selenide waveguides having tin additions is nearly 10-3s. The origin of additional absorption can be explained in the framework of two-steps transition models. The first one is the excitation of excess carriers into the conducting band by highly absorbed pump beam and theirs partial capturing on localized states. The second is the re-excitation of trapped carriers and restoration of optical absorption by signal waveguided beam. 

Cuvinte-cheie
chalcogenide glasses, Integrated optics, Light modulation, Optical properties of amorphous semiconductors