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 SM ISO690:2012KASIYAN, Vladimir, NEDEOGLO, Dumitru, TIMCHENKO, Ivan. Random Impurity Potential and Hopping Conduction in ZnSe. In: Physica Status Solidi (B) Basic Research, 1995, vol. 190, pp. 501-509. ISSN 0370-1972. DOI: https://doi.org/10.1002/pssb.2221900220 |
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  Physica Status Solidi (B) Basic Research |
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| Volumul 190 / 1995 / ISSN 0370-1972 | ||||||
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| DOI:https://doi.org/10.1002/pssb.2221900220 | ||||||
| Pag. 501-509 | ||||||
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Hall effect, electrical conductivity, carrier mobility, and magnetoresistance of Cu‐doped n‐ZnSe bulk crystals are studied in the temperature range 2 to 300 K. Compensating Cu impurity amplifies the random impurity potential, modulates the band edges, and leads to electron localization in the potential wells of the conduction band bottom in slightly doped, highly compensated crystals (K = 0.82 to 0.97). High‐temperature hopping conductivity through the localized states of such type observed in the range 100 to 200 K and accompanied by negative magnetoresistance is first investigated in n‐ZnSe. |
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