| Articolul precedent |
| Articolul urmator |
 |
 100 0 |
 SM ISO690:2012IOVU, Maria, HAREA, Diana, VASILIEV, Ion, KOLOMEYKO, Eduard, YOVU, M.. Transient photocurrent in α-As2Se3 thin films with optical bias. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 2, 24-26 noiembrie 2004, Bucharest. Bellingham, Washington: Cavallioti, 2005, Ediţia 2, Vol.5972, pp. 1-8. ISBN 9739463916. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.639445 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of SPIE - The International Society for Optical Engineering Ediţia 2, Vol.5972, 2005 |
||||||
|
Conferința "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies" 2, Bucharest, Romania, 24-26 noiembrie 2004 | ||||||
|
||||||
| DOI:https://doi.org/10.1117/12.639445 | ||||||
| Pag. 1-8 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As2Se3:Snx (x=0 to 3.5 at.%) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As2Se3, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential function. The dispersion parameter α, which can be deduced from the time dependence of the photocurrent Iph (t) ∞ exp[-(τ/τ) α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α∼50-70 meV. |
||||||
| Cuvinte-cheie Engineering controlled terms Amorphous films, functions, glass, Photocurrents Engineering uncontrolled terms Deep localized centers, Optical bias, Photocurrent decay, Transient photocurrent Engineering main heading Thin films |
||||||
|
Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Iovu, M.A.</dc:creator> <dc:creator>Harea, D.V.</dc:creator> <dc:creator>Vasiliev, I.A.</dc:creator> <dc:creator>Colomeico, E.P.</dc:creator> <dc:creator>Iovu, M.S.</dc:creator> <dc:date>2005</dc:date> <dc:description xml:lang='en'><p>Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As<sub>2</sub>Se<sub>3</sub>:Sn<sub>x</sub> (x=0 to 3.5 at.%) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As<sub>2</sub>Se<sub>3</sub>, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential function. The dispersion parameter α, which can be deduced from the time dependence of the photocurrent I<sub>ph</sub> (t) ∞ exp[-(τ/τ) <sup>α</sup>] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α∼50-70 meV.</p></dc:description> <dc:source>Proceedings of SPIE - The International Society for Optical Engineering (Ediţia 2, Vol.5972) 1-8</dc:source> <dc:subject>Engineering controlled terms Amorphous films</dc:subject> <dc:subject>functions</dc:subject> <dc:subject>glass</dc:subject> <dc:subject>Photocurrents Engineering uncontrolled terms Deep localized centers</dc:subject> <dc:subject>Optical bias</dc:subject> <dc:subject>Photocurrent decay</dc:subject> <dc:subject>Transient photocurrent Engineering main heading Thin films</dc:subject> <dc:title>Transient photocurrent in α-As2Se3 thin films with optical bias</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
|
|
|
