Polarization and temperature relations of luminescence associated with a binary complex of defects in semiconductors

Georgobiani Anatoly; Gruzintsev Alex N.; Zayats Anatoly; Tiginyanu Ion

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2024-04-13 20:19

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GEORGOBIANI, Anatoly, GRUZINTSEV, Alex N., ZAYATS, Anatoly, TIGINYANU, Ion. Polarization and temperature relations of luminescence associated with a binary complex of defects in semiconductors. In: Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR), 1987, pp. 59-62. ISSN 0364-2321.

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Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik ″Kratkie Soobshcheniya po Fizike″. AN SSSR)

/ 1987 / ISSN 0364-2321

Polarization and temperature relations of luminescence associated with a binary complex of defects in semiconductors

Pag. 59-62

Georgobiani Anatoly¹, Gruzintsev Alex N.², Zayats Anatoly¹, Tiginyanu Ion³

¹ P. N. Lebedev Physical Institute of RAS,
² Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences,
³ Technical University of Moldova

Disponibil în IBN: 23 ianuarie 2024

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Rezumat

Radiative recombination of carriers in complex defects in semiconductors is investigated. A relation between the microscopic parameters of the complex (the distance between the defects, their energy positions, etc. ) and the characteristics of its luminescence is established.

Cuvinte-cheie
energy levels, Radiative recombination