Articolul precedent |
Articolul urmator |
99 0 |
SM ISO690:2012 YOVU, M., VASILIEV, Ion, SHPOTYUK, Oleh. Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 32, 12-14 octombrie 2009, San Antonio. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2009, Vol. 2, pp. 371-374. ISBN 978-142444413-7. DOI: https://doi.org/10.1109/SMICND.2009.5336702 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Proceedings of the International Semiconductor Conference Vol. 2, 2009 |
|||||||
Conferința " International Semiconductor Conference" 32, San Antonio, Statele Unite ale Americii, 12-14 octombrie 2009 | |||||||
|
|||||||
DOI:https://doi.org/10.1109/SMICND.2009.5336702 | |||||||
Pag. 371-374 | |||||||
|
|||||||
Descarcă PDF | |||||||
Rezumat | |||||||
The quasi-static capacitance of As10Se90 amorphous film was studied in cycles of heating and cooling near the glass transition temperature Tg=343 K. Features in the capacitance behavior such as the nonexponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As10Se90 which is accompanied by freezing of some charged molecular dipoles. |
|||||||
Cuvinte-cheie Amorphous films, capacitance, Capacitance measurement, Dielectric materials, Dielectric relaxation, glass, heating, Secondary batteries, Semiconducting selenium compounds, Superconducting transition temperature |
|||||||
|