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 SM ISO690:2012ZHITAR, V., PAVLENKO, Vladimir, ARAMĂ, Efim, SHEMYAKOVA, Tatiana. Recombination properties of ZnIn 2s 4:CU single crystals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 31, 13-15 octombrie 2008, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2008, Vol. 2, pp. 241-244. ISBN 978-142442004-9. DOI: https://doi.org/10.1109/SMICND.2008.4703391 |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2008 |
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Conferința "International Semiconductor Conference" 31, Sinaia, Romania, 13-15 octombrie 2008 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2008.4703391 | ||||||
| Pag. 241-244 | ||||||
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Recombination characteristics of ZnIn 2S 4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20 °C are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states. |
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| Cuvinte-cheie Copper concentration, Deep level, Distributed state, Recombination process |
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