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 SM ISO690:2012IVASHCHENKO, Anatolii, KERNER, Iacov, MARONCHUK, Irina. Percolation theory approach to the description of electrical conductivity near 3D-2D transition in thin polycrystalline SnO2 films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 19, 7-11 octombrie 1997, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1996, Vol. 1, pp. 129-132. DOI: https://doi.org/10.1109/SMICND.1996.557322 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1996 |
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Conferința "International Semiconductor Conference" 19, Sinaia, Romania, 7-11 octombrie 1997 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1996.557322 | ||||||
| Pag. 129-132 | ||||||
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In order to simulate numerically the electrical properties of polycrystalline SnO2 thin films a polycrystalline film material is substituted by a 'plane' or 'volume' resistor network. The reliability of the developed calculation procedure is based on the coincidence of our evaluations of the electroconductivity parameters such as critical concentration C* and electrical conductivity index t in the pure 'plane' and 'volume' situations with numerical results predicted by the percolation theory. A good agreement between calculated and experimental data is obtained. It is shown that the variation of relation between average grain size and film thickness may serve as an effective mean to control the electrical properties of semiconducting polycrystalline films including SnO2 polycrystalline films. |
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| Cuvinte-cheie computer simulation, Electric conductivity of solids, Grain size and shape, Percolation (solid state), Polycrystalline materials, resistors, Semiconducting films, Semiconducting tin compounds |
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