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 SM ISO690:2012YOVU, M., POPESCU, Mihai A., SYRBU, Nicolae, SHUTOV, Serghei, VASILIEV, Ion, REBEJA, S., KOLOMEYKO, Eduard. Spectroscopical study of amorphous AsSe films containing tin impurity. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 21, 6-10 octombrie 1998, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1998, Vol. 1, pp. 105-108. DOI: https://doi.org/10.1109/SMICND.1998.732299 |
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| Proceedings of the International Semiconductor Conference Vol. 1, 1998 |
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Conferința "International Semiconductor Conference" 21, Sinaia, Romania, 6-10 octombrie 1998 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1998.732299 | ||||||
| Pag. 105-108 | ||||||
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Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at. %) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations. |
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| Cuvinte-cheie Amorphous films, Arsenic compounds, Impurities, Light absorption, Light reflection, Optical correlation, Semiconductor doping, Spectroscopic analysis, tin |
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