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 SM ISO690:2012IVASHCHENKO, Anatolii, KERNER, Iacov, MARONCHUK, Irina. Effect of substrate origin and annealing conditions on stability of electrical conductivity of SnO2 thin polycrystalline films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 24, 9-13 octombrie 2001, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2001, Vol. 2, pp. 391-394. |
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 Proceedings of the International Semiconductor Conference Vol. 2, 2001 |
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Conferința "International Semiconductor Conference" 24, Sinaia, Romania, 9-13 octombrie 2001 | ||||||
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| Pag. 391-394 | ||||||
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The variation of electrical conductivity in SnO2 thin films induced by their annealing in air or vacuum the temperature range from 380 to 750°C is considered. Substrate origin as well as ambient atmosphere of annealing plays principal role in stability of film properties. |
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| Cuvinte-cheie Annealing, crystal structure, deposition, Electric conductivity, oxygen, Polycrystalline materials, stability, Substrates, Thermal effects, thin films, X ray diffraction analysis |
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