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 SM ISO690:2012ANDRIESH, Andrei, VERLAN, Victor, MALAHOV, Ludmila. Controllable deposition of CdS, CIGS and heterostructures thin films by means of e-beam ablation technology. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 26, 28 septembrie - 2 octombrie 2003, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2003, Vol. 2, Ediția 26, pp. 307-310. ISBN 0780378210. DOI: https://doi.org/10.1109/SMICND.2003.1252441 |
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 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 26, 2003 |
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Conferința "26th International Semiconductor Conference" 26, Sinaia, Romania, 28 septembrie - 2 octombrie 2003 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2003.1252441 | ||||||
| Pag. 307-310 | ||||||
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The technology of controlled deposition of CdS and CuIn1-xGaxSe2 (CIGS) polycrystalline films consisting in of electron-beam (e-beam) ablation deposition at the first stage and subsequent procedure of heat treatment in vapors of a selenium or sulfur for CIGS and CdS accordingly on second was developed. The obtained heterostructures CdS/CuIn1-xGaxSe12 display good photovoltaic properties. Admittance spectroscopy and optical absorption was applied for determination of density of concentration of deep states (N(E)), optimization of deposition process and photovoltaic properties. The continuous distribution N(E) and new type of metastable centers have been found. |
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| Cuvinte-cheie absorption, Admittance, Displays, Heat treatment, Optical films, Photovoltaic systems, Solar power generation, spectroscopy, Sputtering, Temperature control |
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