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 SM ISO690:2012YOVU, M., VASILIEV, Ion, KOLOMEYKO, Eduard. Negative photoconductivity of amorphous Sb2Se3 and Sb2Se3:Sn films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 30, 15-17 octombrie 2007, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2007, Vol. 1, Ediția 30, pp. 219-222. ISBN 1424408474, 978-142440847-4. DOI: https://doi.org/10.1109/SMICND.2007.4519685 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 30, 2007 |
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Conferința "30th International Semiconductor Conference" 30, Sinaia, Romania, 15-17 octombrie 2007 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2007.4519685 | ||||||
| Pag. 219-222 | ||||||
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The photoconductivity spectra of amorphous Sb2Se3 and Sb2Se3:Sn films in the photon energy range 1.0÷2.5 eV have been investigated. The band connected with the presence of the defect states with the maximum located at 1.46 eV was revealed in the photoconductivity spectra. The intensity of this band increases in the samples with tin impurity. The transient photocurrent in the interval of times from 0.2 to 20 s is investigated also. The experimental data are discussed in framework of the model of the charged defects and non-equilibrium dielectric polarization in amorphous semiconductors. |
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| Cuvinte-cheie Amorphous semiconductors, Dielectric polarization, The charged defects, The steady-state photoconductivity |
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