| Articolul precedent |
| Articolul urmator |
 |
 100 0 |
 SM ISO690:2012YOVU, M., VASILIEV, Ion, KOLOMEYKO, Eduard. Photoconductivity of the amorphous As2Se3 film in the medium infrared range. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 29, 27-29 septembrie 2006, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2006, Vol. 1, Ediția 29, pp. 145-148. ISBN 1424401097, 978-142440109-3. DOI: https://doi.org/10.1109/SMICND.2006.283953 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 29, 2006 |
||||||
|
Conferința "29th International Semiconductor Conference" 29, Sinaia, Romania, 27-29 septembrie 2006 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.2006.283953 | ||||||
| Pag. 145-148 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The potocurrent spectra and transient current-voltage characteristics for amorphous As2Se3 film sandwiched between two aluminum electrodes are presented. During the measurements, the sample was illuminated with the light from the spectral range 0.8 to 4 μm. The origin of photoresponse related to the involvement in the process of the deep defect centers is discussed. |
||||||
| Cuvinte-cheie Chalcogenide film, deep centers, Medium infrared range, photoconductivity |
||||||
|
|
|
|
