Impurity band in p-type CuInSe2

Arushanov Ernest; Schon Jan Hendrik; Matsushita Hiroaki; Takizawa Takeo

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SM ISO690:2012

ARUSHANOV, Ernest, SCHON, Jan Hendrik, MATSUSHITA, Hiroaki, TAKIZAWA, Takeo. Impurity band in p-type CuInSe2. In: Physica Status Solidi (A) Applied Research, 1999, vol. 176, pp. 1009-1016. ISSN 0031-8965. DOI: https://doi.org/10.1002/(SICI)1521-396X(199912)176:2<1009::AID-PSSA1009>3.0.CO;2-H

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Physica Status Solidi (A) Applied Research

Volumul 176 / 1999 / ISSN 0031-8965 /ISSNe 1521-396X

Impurity band in p-type CuInSe₂

DOI:https://doi.org/10.1002/(SICI)1521-396X(199912)176:2<1009::AID-PSSA1009>3.0.CO;2-H

Pag. 1009-1016

Arushanov Ernest¹, Schon Jan Hendrik²³, Matsushita Hiroaki⁴, Takizawa Takeo⁴

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² University of Konstanz,
³ Lucent Technologies,
⁴ Nihon University, Tokio

Disponibil în IBN: 22 noiembrie 2023

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Rezumat

The results of transport measurements on p-type CuInSe₂ single crystals in the temperature range of 20 to 300 K are presented and explained assuming the existence of an impurity band. The impurity bandwidth, the values of the activation energies of the acceptors, their concentrations, as well as concentration of the compensating donors were calculated.

Cuvinte-cheie
activation energy, bandwidth, Carrier concentration, Carrier mobility, charge carriers, Copper compounds, Crystal growth, Hall effect, Hole traps, Impurities, Semiconductor device models, Transport properties