| Conţinutul numărului revistei |
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 SM ISO690:2012VASILIEV, Ion, SHUTOV, Serghei. Amorphous, glassy and porous semiconductors: Photocapacitance relaxation in amorphous As2Se3 films. In: Semiconductors, 1999, vol. 33, pp. 792-794. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187783 |
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  Semiconductors |
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| Volumul 33 / 1999 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187783 | ||||||
| Pag. 792-794 | ||||||
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Studies of the photocapacitance of a-As2Se3 films reveal that its relaxation has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresholds and magnitudes. The authors associate the fast component of the relaxation with photoemission of holes from D+ centers, and speculate on the possible nature of the slow component as well. |
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| Cuvinte-cheie chalcogenide glasses, Arsenic Trisulfide, thin films |
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