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 SM ISO690:2012SIRKELI, Vadim, YILMAZOGLU, Oktay, AL-DAFFAIE, S., OPREA, I., ONG, Duu Sheng, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 8, 8-9 mai 2017, Barselona. Bellingham, Washington USA: SPIE, 2017, Ediția 8, Vol.10248, pp. 1-8. ISBN 978-151060997-6. ISSN 0277786X. DOI: https://doi.org/10.1117/12.2265367 |
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 Proceedings of SPIE - The International Society for Optical Engineering Ediția 8, Vol.10248, 2017 |
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Conferința "Nanotechnology" 8, Barselona, Spania, 8-9 mai 2017 | ||||||
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| DOI:https://doi.org/10.1117/12.2265367 | ||||||
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II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (∼331 kV/cm for ZnSe vs. ∼80 kV/cm for GaAs), and higher values of the conduction band offset (1.5 eV for BeSe/ZnSe vs. 0.7 eV for AlAs/GaAs). In this paper we report on numerical study of the resonant tunneling transport in ZnBeSe/ZnSe/ZnBeSe symmetric and asymmetric resonant tunneling diodes (RTDs). The negative differential resistance feature is observed in the current-voltage characteristics of the ZnSe-based RTDs. It is found that the maximum of peak-to-valley ratio (PVR) of the current density is equal to 6.025 and 7.144 at 150 K, and to 1.120 and 1.105 at 300 K for the symmetric and asymmetric RTDs, respectively. The effect of barrier heights on the frequency and output power performance of RTD devices are studied and discussed. |
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| Cuvinte-cheie Alloy, BeSe, negative differential resistance, Resonant tunneling diodes, terahertz emission, ZnBeSe, ZnSe |
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