The Goos-Hänchen effect is the lateral shift of totally reflected beam relative to the beam reflected from a perfect mirror. This shift is caused by the presence of the energy flux provided by the evanescent field on the boundary of two media [1]. The Goos-Hänchen effect can be significantly enhanced in case of additional energy flux at the interface caused by surface electromagnetic wave (SEW) propagation, for example, propagation of surface plasmon-polaritons. In this case the shift of several microns can be achieved [2]. The application of Goos-Hänchen effect gives a way for the further modification and development of optical and biooptical sensing. The surface-plasmon resonance sensor developed by measuring Goos-Hänchen shift demonstrates high sensitivity and provides an alternative phase-sensitive approach utilizing much simplified optics [2].Fig.1 Microimages of the fluorescence of the reflected spolarized (a) and p-polarized (b) beams, (c) – intensityof these profilesSurface electromagnetic waves in one-dimensional (1D) photonic crystals attract continuous interest as an alternative to surface plasmons in many current applications. However, SEWs have some peculiarities. First, polarization conditions of SEW excitation are inverted relative to plasmons, SEWs are excited solely for the spolarized incident light. Second, changing of photonic crystal period gives the way to tune the SEW wavelength in the wide spectral range. Third, the SEW mean free path is significantly, 4-5 times, larger than plasmon one due to low absorption in dielectric layers. In this paper, enhancement of the Goos-Hänchen effect due to SEW excitation in photonic crystals is observed and systematically studied. emonstrates high sensitivity and provides an alternative phasesensitive approach utilizing much simplified optics [2]. Samples of 1D photonic crystals (Bragg reflectors) were fabricated using thermal thin-film deposition on glass substrate and consisted of 6 bilayers of SiO2/ZrO2 with refractive indices of 1.46 and 1.9, respectively. The period of photonic crystal was equal to 250±10 nm. The s-polarized laser radiation with 532 nm of wavelength was used for the SEW excitation in the Kretschmann–Raether configuration. Glass substrate was contacted to the prism using index-matching liquid, in which an ethanol solution of Rhodamine 6G (10-5M) was added. There are two ways of SEW scattering: in the sample surface plane and out of the surface. The first one leads to SEW recoupling back to the prism and gives an additional component in the detected reflected beam. The second way allows visualization of the SEW in the optical far-field microscope [3, 4]. Direct visualization of the Goos-Hänchen effect is performed using SEW microscopy technique. As the SEW is excited, reflected beam undergoes the lateral shift. Fluorescence of Rhodamine 6G dye is used for visualization of incident and reflected beams. The Goos-Hänchen effect manifests itself in the shift of reflected spot cross-section for the s-polarized incident beam relative to the position of reflected spot of the p-polarized beam. In the studied case the shift value is approximately 30λ, thus, the Goos-Hänchen effect enhancement due to the additional lateral flux of energy in SEW is more than one order of magnitude in comparison with total reflection case.