The diode detectors (DD) play an important role in radio technique and electronics. The use of high frequencies (above 1 GHz) stimulated the careful study of diodes with Schottky barrier. These diodes use the quick-acting metal-semiconductor contacts [1]. The further improvement of their parameters was achieved due to fall of the working temperature. This direction was named cryoelectronics [2], it allows to raise the nonlinearity of the current-voltage dependences and improve DD parameters. In our publications [3, 4 et al.] the numerical modeling of the electrical potential distribution and current passing in the contacts of normal metal or superconductor with semiconductor alloy bismuth-antimony (Bi-Sb) was made. There were analyzed possibilities to create the diode detectors based on these contacts and working at temperature of liquid helium 4.2 K. The dependences of the current responsivity, the voltage responsivity and the noise equivalent power on the signal frequency were analyzed. The role of contact area was discussed. The contacts of Bi-Sb with different materials were analyzed. The obtained results were compared with literature data. Both DD working at temperature of liquid nitrogen 77.4 K and liquid helium were considered. The comparison with existent literature data shows the proposed DD can be 10 100 times better. The physical reasons of these advantages were discussed.