Variable range-hopping conductivity in Cu2ZnSiSe4
Close
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
781 3
Ultima descărcare din IBN:
2023-01-03 07:32
SM ISO690:2012
GUK, Maxim. Variable range-hopping conductivity in Cu2ZnSiSe4. In: Moldavian Journal of the Physical Sciences, 2013, nr. 1-2(12), pp. 18-25. ISSN 1810-648X.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Moldavian Journal of the Physical Sciences
Numărul 1-2(12) / 2013 / ISSN 1810-648X /ISSNe 2537-6365

Variable range-hopping conductivity in Cu2ZnSiSe4

Pag. 18-25

Guk Maxim
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 18 decembrie 2013


Rezumat

Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.

Dublin Core Export

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Guc, M.S.</dc:creator>
<dc:date>2013-09-03</dc:date>
<dc:description xml:lang='en'>Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.</dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 12 (1-2) 18-25</dc:source>
<dc:title>Variable range-hopping conductivity in Cu2ZnSiSe4</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>