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SM ISO690:2012 IOVU, Maria, HAREA, Diana, VASILIEV, Ion, KOLOMEYKO, Eduard, YOVU, M.. Transient photocurrent in α-As2Se3 thin films with optical bias. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 2, 24-26 noiembrie 2004, Bucharest. Bellingham, Washington: Cavallioti, 2005, Ediţia 2, Vol.5972, pp. 1-8. ISBN 9739463916. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.639445 |
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Proceedings of SPIE - The International Society for Optical Engineering Ediţia 2, Vol.5972, 2005 |
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Conferința "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies" 2, Bucharest, Romania, 24-26 noiembrie 2004 | ||||||
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DOI:https://doi.org/10.1117/12.639445 | ||||||
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Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As2Se3:Snx (x=0 to 3.5 at.%) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As2Se3, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential function. The dispersion parameter α, which can be deduced from the time dependence of the photocurrent Iph (t) ∞ exp[-(τ/τ) α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α∼50-70 meV. |
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Cuvinte-cheie Engineering controlled terms Amorphous films, functions, glass, Photocurrents Engineering uncontrolled terms Deep localized centers, Optical bias, Photocurrent decay, Transient photocurrent Engineering main heading Thin films |
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