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 SM ISO690:2012SYRBU, Alexei, DESAN, P., ANDROS, Timofei, YAKOVLEV, Vladimir, SURUCEANU, Grigore, SNIGUR, Anatolii, SMANTANA, V.. InGaAsP/InP laser diodes emitting at 1300 nm for optical communications. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 457-460. DOI: https://doi.org/10.1109/SMICND.1995.495059 |
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| Proceedings of the International Semiconductor Conference 1995 | ||||||
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Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.1995.495059 | ||||||
| Pag. 457-460 | ||||||
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The fabrication process of InGaAsP/InP buried heterostructure laser diode modules emitting at 1300 nm is described. Results on testing these modules in a real fiber optic communication system are presented as well. It was demonstrated that buried heterostructure laser diodes produced by a combination of mesa chemical and melt-etching and liquid phase epitaxial regrowth have high performance characteristics. These laser diodes were used to fabricate fiber optic pigtailed modules. The operation of these modules in a real fiber optic communication system was compared with the operation of standard emitters and did show a considerable increasing of system parameters. At the laser diode module mean operating current of 25 mA and transmission rate of 41.2 Mbit/s for a 25 km transmission line the bit error rate (BER) of 10-11 was measured. |
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| Cuvinte-cheie Bit error rate, Epitaxial growth, Fiber optic networks, Heterojunctions, Optical communication, Semiconducting gallium arsenide, Semiconducting indium phosphide, Semiconductor device manufacture, Semiconductor growth |
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