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 SM ISO690:2012YOVU, M., BUZURNIUC, Svetlana, VERLAN, Victor, PRISAKAR, Alexandr, MALAHOV, Ludmila. Influence of the light irradiation on optical characteristics of As 2 (SxSe1-x)3 thin films obtained from chemical solutions. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 4, 28-31 august 2008, Constanta. Bellingham, Washington: SPIE, 2009, Ediţia 4, Vol.7297, pp. 1-6. ISBN 9780819475596. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.823641 |
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 Proceedings of SPIE - The International Society for Optical Engineering Ediţia 4, Vol.7297, 2009 |
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Conferința "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies" 4, Constanta, Romania, 28-31 august 2008 | ||||||
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| DOI:https://doi.org/10.1117/12.823641 | ||||||
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Results of researches on technology of deposition of thin layers of mixed composition As2 (SxSe1-x)3 (0 <x <1), obtained from chemical solutions of separate components As 2S3 and As2Se3 are given, and some optical properties (transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of edge of absorption in infra-red (IR) area were found at ultra-violet (UV) and actinic irradiations. The maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording (λ=488 nm)) on thin layers is 2.5 % and after additional processing in the negative etching is 36 %. |
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| Cuvinte-cheie Chalcogenide amorphous semiconductor, Deposition from solution, Material for registration of optical information, Photosensitive material |
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